Advanced MOS Devices and their Circuit Applications

Advanced MOS Devices and their Circuit Applications
Authors: Ankur Beohar, Ribu Mathew, Abhishek Kumar Upadhyay
Year: 2024
Publisher: CRC Press
English language
Format: pdf (true)
Pages: 161
Size: 5 MB

This book serves as a valuable resource for semiconductor engineers, researchers, and students seeking a deeper understanding of MOS technology development. We have taken a unique approach, emphasizing the physical description, modeling, and technological implications of MOS devices, rather than focusing solely on formal aspects of device theory. By doing so, we aim to provide practical insights that can be readily applied in the real-world challenges faced by industry professional.

In this book, we dedicate significant attention to the critical issue of hot-carrier effects, investigating the engineering aspects of this problem and its impact on MOS devices. Additionally, we explore emerging low-temperature MOS technology, a rapidly evolving area that holds great promise for future advancements. Furthermore, we address the challenge of latch-up in scaled MOS circuits, shedding light on this complex phenomenon and its implications for circuit reliability.

It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology.

Contents

1 An overview of DC/RF performance of nanosheet field effect transistor for future low-power applications
2 Device design and analysis of 3D SCwRD cylindrical (Cyl) gate-all-around (GAA) tunnel FET using split-channel and spacer engineering
3 Investigation of high-K dielectrics for single- and multi-gate FETs
4 Measurement of back-gate biasing for ultra-low-power subthreshold logic in FinFET device
5 Compact analytical model for graphene field effect transistor: Drift-diffusion approach
6 Design of CNTFET-based ternary logic flip-flop and counter circuits using unary operators
7 Novel radiation-hardened low-power 12 transistors SRAM cell for aerospace application
8 Nanoscale CMOS static random access memory (SRAM) design: Trends and challenges
9 Variants-based gate modification (VGM) technique for reducing leakage power and short channel effect in DSM circuits
10 A novel approach for high speed and low power by using nano-VLSI interconnects

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